Cullen School of Engineering

Location

Dept. of Electrical & Computer Engineering
N308 Engineering Building 1
Houston, Texas 77004-4005
Phone: 713-743-4400
Fax: 713-743-4444
Department: ece [at] egr [dot] uh [dot] edu
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Faculty

Dr. Shin-Shem Steven Pei

Professor

N 308 Engineering Building 1

Houston, Texas 77204-4005

Tel: 713-743-4433 | Fax: 713-743-4444

Email: spei [at] uh [dot] edu

Education

  • BS Physics, National Taiwan University, Taipei
  • PhD Solid State Physics, State University of New York, Stony Brook

Professional Experience

1994-Present

Professor of Electrical and Computer Engineering

1998-Present

Professor of Physics

2005-Pesent

Deputy Director, Center for Advanced Materials

2005-Present

Executive Director, Southwest Public Safety Technology Center

1987-1990

Associated Editor of IEEE Transactions on Electron Devices

1986-1994

Head of the Materials and Processing Research Department/Heterostructure Materials and IC Department at AT&T Bell Laboratories, Murray Hill, NJ


Awards and Honors

Research

Research Interests

  • Graphene, nanowires and nanotubes grown by chemical vapor deposition (CVD) for biosensors, microwave devices and integrated circuits and other electronic applications.

  • Mid infrared type-II quantum cascade lasers based on MBE grown GaSb/InAs heterostructures for chemical sensing, countermeasures, and other optoelectronic applications.

  • Long wavelength quantum well infrared photodetectors (QWIPs) based on MBE and MOCVD grown GaAs/AlGaAs heterostructures for sensing applications.

  • High Electron Mobility Transistor (HEMT) and Heterojunction bipolar transistors (HBTs) based on MBE, CBE and MOCVD grown GaAs/AlGaAs and InGaAs/InAlAs heterostructures for high speed and high frequency communication applications.


Presentations

Selected Publications

Selected Publications

  • 2002-PRESENT: NANOTUBE, NANOWIRE, GRAPHENE

  • “Control and Characterization of Individual Grains and Grain Boundaries in Graphene Grown by Chemical Vapour Deposition”, Yu QK; Jauregui LA; Wu W; Colby R; Tian JF; Su ZH; Cao HL; Liu ZH; Pandey D; Wei DG; Chung J; Peng P; Guisinger N; Stach EA; Bao JM; Pei SS, Chen YP, Featured on the cover of June issue of Nature Materials 10, 443–449 (May 8, 2011).

  • “Room-temperature Fano resonance tunable by chemical doping in few-layer graphene synthesized by chemical-vapor deposition”, Liu, ZH; Lu, XX; Peng, P; Wu, W; Pei, SS; Yu, QK; Bao, JM, arXiv:1004.4042v1 (Apr 23 2010), Physical Review B82 (15): 155435 (Oct 18 2010) .

  • “Tetragonal tungsten oxide nanobelts synthesized by chemical vapor deposition”, Wu, W; Yu, QK; Lian, J; Liu, ZH; Bao, JM; Pei, SS, Journal of Crystal growth, 312 (21): 3147-3150 (Oct 15 2010) .

  • “Wafer-scale Synthesis of Graphene by Chemical Vapor Deposition and its Application in Gas Sensing”, Wu, W; Liu, ZH; Jauregui, LA; Yu, QK; Pillai, R; Cao, HL; Bao, JM; Chen, YP; Pei, SS, Sensors and Actuators B-Chemical, 150 (1): 296-300 (Sep 21 2010) .

  • “Substrate Hybridization and Rippling of Graphene Evidenced by Near-Edge X-ray Absorption Fine Structure Spectroscopy”, Lee, V; Park, C; Jaye, C; Fischer, DA; Yu, QK; Wu, W; Liu, ZH; Pei, SS; Smith, C; Lysaght, P; Banerjee, S, Journal of Physical Chemistry letters, 1 (8): 1247-1253 (Apr 15 2010) .

  • “Electronic transport in chemical vapor deposited graphene synthesized on Cu: Quantum Hall effect and weak localization”, Cao, HL; Yu, QK; Jauregui, LA; Tian, J; Wu, W; Liu, Z; Jalilian, R; Benjamin, DK; Jiang, Z; Bao, J; Pei, SS; Chen, YP, Applied Physics Letters, 96 (12): 122106 (Mar 24 2010) .

  • “Cross-sectional Transmission Electron Microscopy of Thin Graphite Films Grown by Chemical Vapor Deposition”, Colby, R; Yu, QK; Cao, HL; Pei, SS; Stach, EA; Chen, YP, Diamond and Related Materials, 19 (2-3): 143-146 (Feb-Mar 2010) .

  • “Large Scale Graphene Films Synthesized on Metals and Transferred to Insulators for Electronic Applications”, Cao, HL; Yu, QK; Colby, R; Pandey, D; Park, CS; Lian, J; Zemlyanov, D; Childres, I; Drachev, V; Stach, EA; Hussain, M; Li, H; Pei, SS; Chen, YP, Journal of Applied Physics, 107 (4): 044310 (Feb 15 2010) .

  • “Aligned Tungsten Oxide Nanowires on Tungsten (100) Substrates”, Yu, QK; Wu, W; Zhang, JM; Liu, BA; Pei, SS, Materials Letters, 63 (26): 2267-2269 (Oct 31 2009) .

  • “Graphene Synthesis by Surface Segregation on Ni and Cu”, Yu, QK; Lian, J; Siriponglert, S; Li, H; Chen, YP; Pei, SS, arXiv:0804.1778v1 (Apr 10 2008) and “Graphene Segregated on Ni surfaces and Transferred to Insulators”, Yu, QK; Lian, J; Siriponglert, S; Li, H; Chen, YP; Pei, SS, Applied Physics Letters, 93 (11): 113103 (Sep 15 2008) and selected for Virtual Journal of Nanoscale Science and Technology, 18(13) arXiv:0804.1778v2 (Dec 9 2008) .

  • “Horizontally-aligned growth of Cu5Si polycrystalline nanorods on Si”, Wu, W; Yu, QK; Zhang, JM; Lian, J; Liang, G; Ewing, RC; Pei SS, Applied Physics Letters, 92 (25): 253113 (Jun 23 2008) .

  • “Mechanism of Horizontally Aligned Growth of Single-Wall Carbon Nanotubes on R-Plane Sapphire”, Q. Yu, G. Qin, H. Li, Z. Xia, Y. Nian, and S. S. Pei, Journal of Physical Chemistry B, 110 (45): 22676-22680 (Nov 16 2006) .

  • 2005-2006: ATOMIC FORCE MICROSCOPE

  • “Fabrication of Short and Thin Silicon Cantilever Tips for AFM with SOI Wafers”, Yu, QK; Qin, GT; Darne, C; Cai, CZ; Wosik, W; Pei, SS, Sensors and Actuators A-Physical, 126 (2): 369-374 (Feb 14 2006) .


Technical Reports

  • “Fabrication of Single-crystalline Graphene Arrays”, Qingkai Yu, S. S. Pei, UH provisional patent (US Serial No. 61/391,866) filed on October 11, 2010.

  • “Fabrication of Short and Thin Silicon Cantilver Tips for AFM with SOI Wafers”, Qingkai Yu, S. S. Pei, Chengzhi Cai, Chi-Ming Yam, and Quoting Qin, US Patent Number 7,637,960 issued on Dec. 29, 2009.

  • (“Horizontally aligned growth of silicon carbide nanowires on sapphire”, Hao Li, Qingkai Yu and S. S. Pei, UH patent disclosure, 2005.)

  • (“Quality-of-Service (QoS) Supporting Mechanisms for Multimedia Streaming over Wireless Networks”, Nicolaos B. Karayiannis, Il Mo Jung, and S. S. Pei, UH provisional patent filed, 2005.)

  • (“Infrared Echelon-type Polarizing Beam Splitter”, Y. Chen and S. S. Pei, UH patent disclosure, 2000.)

  • “Method for Making Self-Electro-Optical Device and Devices Made Thereby (in situ IR photo-reflectance measurement technique for controlling the growth of Fabry-Perot resonance cavities)”, L. A. D’Asaro, S. S. Pei and J. M. Kuo, U. S. Patent Number 5,298,454 issued on Mar. 29, 1994.

  • “Planar FET-SEED Integrated Circuits”, L. A. D’Asaro, S. S. Pei, L. M. F. Chirovsky and T. K. Woodward, U. S. Patent Number 5,289,015 issued on Feb. 22, 1994.

  • “Planar Quantum Well Photodetector”, S. S. Pei and S. P. Hui, U. S. Patent Number 5,281,542 issued on Jan. 25, 1994.

  • “Planar Buried Quantum Well Photodetector”, S. S. Pei and S. P. Hui, U. S. Patent Number 5,223,704 issued on June 29, 1993.

  • “Fabrication of GaAs Integrated Circuits”, S. S. Pei, M. P. Iannuzzi, T.-H.-H. Voung, A. C. Beca, A. Lahav, C. L. Reynolds, Jr., and R. H. Burton, U. S. Patent Number 5,041,393 issued on Aug. 20, 1991.

  • “Josephson Junction Fabrication Method”, S. S. Pei and T. A. Fulton, U. S. Patent 4,470,190 issued on Sept. 11, 1984.


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